Conductance fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) films are described. The spectral density of the coplanar current fluctuations has a 1/f frequency dependence for frequency f from 1f10⁴ Hz over the temperature range 300T450 K. The noise power density displays a power-law dependence on the dc current passing through the film, with a temperature-dependent power-law exponent. Random telegraph switching noise is observed in coplanar current measurements in samples with effective volumes of 10^-6 to 10^-7 cm³ with fluctuations as large as {Δ}R/R{~}1%. Statistical analysis of these fluctuations indicates that the 1/f noise is strongly non-Gaussian, suggestive of cooperative interactions between fluctuators. A model is proposed in which the noise is dominated by inhomogeneous current paths whose local conductivity is modulated by bonding rearrangements enabled by hydrogen motion.
No takes yet. Share an insight, caveat, or question.
Parman et al. (1993) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: