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Measurements of coplanar current fluctuations in n-type hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence for frequency f in the range 1f10³ Hz over a temperature range 300{≤}T{≤}450 K. The noise power density displays a power-law dependence on the dc current, where the power-law exponent b increases with temperature from b{~}1 at 350 K to {~}2.5 at 450 K. These results are discussed in terms of models for noise in composite and inhomogeneous materials.
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Parman et al. (1991) studied this question.
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