Band discontinuities and band bending at the epitaxial SrTiO3∕GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO3∕GaAs(001) formed a type II heterojunction with conduction and valence band offsets being 0.6 and 2.5 eV, respectively, for both n- and p-GaAs(001) substrates. The photoemission results further revealed that Fermi level was unpinned at the epitaxial SrTiO3∕GaAs(001) interface.
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Liang et al. (2005) studied this question.
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