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We investigated the structure, magnetic, and transport properties of ZnFe2O4 (ZFO) by both experimental and first-principles study. The epitaxial ZFO films prepared with various oxygen partial pressures show clear semiconducting behavior and room-temperature ferrimagnetism. A large magnetoresistance of −21.2% was observed at 75 K. The room-temperature ferrimagnetism is induced by the cation disordering. The calculated results indicate that under cation disordering, the ZFO with various oxygen vacancies is a half-metal semiconductor with both possible positive and negative signs of the spin polarization, while ZFO with no oxygen vacancies is an insulator and can be acted as the spin filter layer in spintronic devises.
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Jin et al. (2014) studied this question.
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