A New Technique of Boron Doping in Si:H Films

Very high doping efficiency of boron atoms in hydrogenated silicon has been achieved using the glow discharge of a SiH 4 -B 2 H 6 mixture gas under conditions of a low concentration of SiH 4 and application of magnetic field to the plasma column. A maximum conductivity of 7.8 Ω -1 cm -1 has been obtained at a doping ratio of N B 2 H 6 / N SiH 4 =2.6%. This high conductivity is found to be related to partial crystallization of amorphous Si:H network.