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Cadmium telluride is deposited epitaxially by rf sputtering on the clean surface of InSb(100) substrate from which the surface native oxide has been etched off in advance by H 2 plasma treatment. The crystalline quality of CdTe films which depends on the substrate temperature is evaluated by means of the optical reflectance, Raman scattering and RHEED pattern measurements. CdTe films prepared at temperatures of 250-300°C are deposited epitaxially, but those at 100°C are not.
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Nishibayashi et al. (1987) studied this question.
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