With an aim of developing new types of superconducting materials, Mo-N films and Mo/Si multi-layered films were fabricated by reactive and two-target sputtering methods, respectively. The superconducting properties such as Tc, Hc2and Jcwere examined. The crystal structure of Mo-N films changed from bcc to fcc with increasing N2gas flow rate during sputtering and a homogeneous fcc Mo2N superconductor was obtained. On the other hand, the superconducting characteristics of the Mo/Si multi-layered film with a layer spacing 32.3 Å were confirmed to be similar to those of amorphous Mo-Si alloys except the occurrence of anisotropic vortex pinning.
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Ikebe et al. (1983) studied this question.
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