Domain Configuration and Losses in Cube-Textured Silicon Iron

Studies of the domain configuration of single crystals with the (001) plane parallel to the surface in 3% silicon iron were made at various states of magnetization up to saturation. These measurements were made in the 〈100〉 and 〈110〉 direction. It was found in both cases that the predominant magnetization process was 90° wall motion and nucleation of new 90° wall domains. Alternating current losses and dc hysteresis losses were measured on highly oriented polycrystalline silicon iron having the (001) [100] orientation in a direction parallel to the 〈100〉 and parallel to the 〈110〉 direction. A large increase in losses was noted in going from the 〈100〉 to the 〈110〉 direction. Only a small part of the increase was due to an increase in the hysteresis loss. It is concluded that the large increment in total losses in the 〈110〉 direction is related to the nucleation of a unique 90° domain-wall structure. The data obtained also suggest that the easiest process of magnetization is not necessarily the motion of 180° walls.