The structure of the relaxed GaSb(110) surface has been determined by mass-resolved Rutherford backscattering of He⁺ ions. From measurements of ion blocking angles it is concluded that the relaxation involves a rotation of the Ga-Sb surface bond by an angle of ω=29^∘_-4^∘^+7^∘ out of the surface plane. The bond lengths at the surface are shown to remain unchanged. The root-mean-square thermal vibration amplitude of the surface atoms is found to be enhanced with respect to the bulk amplitude by a factor of 1.5±{}0.2.
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Smit et al. (1984) studied this question.
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