Transmission electron microscopy was used to study the interfacial reactions and crystallographic structure in high-temperature sputtered Al alloy/TiN system. An intermediate layer and semispherical precipitates were observed as the reaction products during high-temperature sputtering at 500 °C. Electron diffraction analysis indicated that the intermediate layer consisted of hexagonal AlN and cubic TiN. Semispherical precipitates were also found to consist of tetragonal Al3Ti. Additional energy dispersive x-ray spectrometer analysis suggested that the intermediate layer was formed by the diffusion of Al atoms into the TiN film.
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Okihara et al. (1995) studied this question.
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