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August 17, 1987Applied Physics Letters

Novel oxidation process in Ge+-implanted Si and its effect on oxidation kinetics

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Authors

OHO. W. HollandOak Ridge National LaboratoryCWC. W. WhiteColorado School of MinesDFD. FathyOak Ridge National Laboratory

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Holland et al. (1987) studied this question.

synapsesocial.com/papers/6a84503e309bd08d9173129bhttps://doi.org/10.1063/1.98385
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