Optimum Second-Harmonic Generation in Nondegenerate Semiconductors using dc Electric Fields

In this paper the author has analytically investigated the use of dc electric fields of arbitrary strength, for the generation of second harmonics of high-frequency electromagnetic waves in a nondegenerate semiconductor. Boltzmann equation techniques have been employed to describe the motion of free carriers inside the semiconductor; the only form of carrier scattering considered is acoustic phonon scattering. The curve of second-harmonic intensity vs dc field exhibits a maximum, thus illustrating that there is an optimum value of the dc field for which the generation can be most efficient.