Melted Layer Crystal Growth and Its Application to Germanium

Single‐crystal material of constant impurity distribution may be grown conveniently from a doped melted layer maintained above solid retained in a crucible. As crystal is withdrawn from the melt, fresh material is supplied to the melted layer by moving the melted layer downward through the solid. A single crystal may be grown using direct high‐frequency coupling to heat the melted layer if fluctuating components of the field are removed. Data are given for resistivity profiles of germanium crystals doped with antimony and grown with manual operation of the heaters.