Modified surface charge spectroscopy for the characterization of insulator/semiconductor structures

In the present study, a modified charge neutralizer was used to generate both the negative and positive surface potentials at the dielectric surface for the surface charge spectroscopy (SCS). A stable surface potential and a uniform potential area can be easily achieved. The SCS results of plasma enhanced chemical vapor deposition SiO2/Si samples without annealing and thermal SiO2/Si samples with and without annealing in forming gas (4%H2 in N2) are used to demonstrate the applicability of the SCS analysis.