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As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O vacancies and Zn interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.
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Kim et al. (2009) studied this question.
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