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Experimental review reveals a constant oxygen 2p valence band across diverse oxide-semiconductor interfaces, suggesting a universal reference level for band alignment.
Experimentally observed trends in energy barriers at interfaces of different semiconductors (Si, Ge, GaAs, InP) with wide-gap oxide insulators are overviewed, revealing general features over a wide spectrum of studied materials. In particular, we found that the energy position of the O2p-derived oxide valence band remains nearly constant in a large number of oxides and, therefore, can be used as a reference level to evaluate the interface band alignment between oxides and semiconductors as well as between dissimilar oxides materials.
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Afanas’ev et al. (2011) studied this question.
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