High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a lowVTof 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm2/ Vmiddots, and largeIon/Ioffratio of 5 times 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.