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Self-assembled nanodielectric multilayers are deposited from solution under ambient conditions using phosphonic-acid-functionalized precursors. The films exhibit excellent insulating properties, with capacitances approaching 700 nF/cm2. Pentacene transistors fabricated with these gate dielectrics operate at very low voltages and exhibit hole mobilities of ∼0.3 cm2/(V s).
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Ha et al. (2009) studied this question.
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