Segregation at GaAs/AlAs (001) heterointerfaces has been studied experimentally by an in situ electron diffraction technique during molecular-beam epitaxy and by ex situ transmission electron microscopy. Whereas the GaAs-on-AlAs interface is abrupt, we find Ga segregating up to 20 crystal planes when depositing AlAs on GaAs(001). The measurements indicate an anisotropic in-plane structure of this interface with elongated Alₓ{Ga}_{1{{-}}x}$As regions extending along [1-bar10]. Our findings provide insight into both the segregation mechanism and electron diffraction from growing surfaces at glancing angles.
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Braun et al. (1997) studied this question.
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