Low-threshold InGaAs strained-layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy

We report on the InGaAs/GaAs/GaInP strained-layer quantum well (QW) lasers grown by chemical beam epitaxy (CBE). The single QW broad-area layers have a very low threshold current density of 70 A/cm2, which is among the lowest value reported for InGaAs/GaAs/GaInP lasers. Ridge-waveguide lasers emitting at 0.98 μm have a continuous wave (cw) threshold of 7.8 mA for a 500-μm-long cavity and a differential quantum efficiency as high as 0.9 mW/mA. Internal quantum efficiency of 0.95 and internal waveguide losses of 2.5 cm−1 were obtained. Linear cw output power of 100 mW was obtained. These results demonstrate that CBE is capable of growing 0.98 μm InGaAs strained-layer QW lasers having performance similar to the best prepared by other epitaxial growth techniques.