Finite-element thermal modeling shows that thermoelectric cooled operation of IV-VI semiconductor diode lasers is possible by replacing the thermally resistive lead-salt substrate with copper. Contrasting thermal models reveal a 63 K decrease in active region temperature under normal operating conditions when PbTe is replaced with copper. This improved device structure can be obtained by using epitaxial-lift-off techniques similar to those developed for III-V semiconductor devices.
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Lewelling et al. (1997) studied this question.
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