Temperature profiles in the bulk and at the front facet of a 20 emitter GaAs/AlGaAs double-quantum-well laser array are studied by spatially resolved luminescence and micro-Raman spectroscopy. For optical output powers of about 1 W, the facet temperature of the individual emitters differs by up to 90 K. In contrast, the temperature distribution inside the resonator is highly uniform with temperature differences of less than 2 K. The facet temperature distribution correlates with the near-field intensity pattern of the laser array. Reabsorption of laser emission close to the facet and subsequent surface recombination of the photogenerated carriers represent the main heating mechanism.
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Puchert et al. (1996) studied this question.
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