Raman scattering from solid silicon at the melting temperature

The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6-{μ}m radiation from a CO₂ laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes---Stokes intensity ratio and the shift of the Raman peak are also determined.