A localised scheme is introduced to study the interaction between phonons and valence electrons in tetrahedrally bonded solid. The authors obtain a simple Hamiltonian depending on just one parameter which is self-consistently computed for Si, Ge and GaAs. Nonpolar optical coupling constants and deformation potentials are calculated for those semiconductors and compared with experimental data from nonlinear transport and Raman scattering respectively.
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Sánchez‐Dehesa et al. (1981) studied this question.
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