The authors report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. The authors show that the estimated power performance of this device at the highest frequencies is better than for any three-terminal devices because the f/sub t/ of the power HEMT is high, even at high drain-source bias.>
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Aina et al. (1992) studied this question.
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