Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C

F. Jona; Hartmut Wendt

doi:10.1063/1.1708925

August 1, 1966Journal of Applied Physics

Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation F. Jona, H. R. Wendt; Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C. Journal of Applied Physics 1 August 1966; 37 (9): 3637–3638. https://doi.org/10.1063/1.1708925 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search

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synapsesocial.com/papers/6a8472692327ba91ab8d8f7f https://doi.org/10.1063/1.1708925

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Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C

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Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°C

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