In this paper, InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator, which analyzes the device under both conditions: impressed terminal voltage and realistic load impedances. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation.
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R. Judaschke (2000) studied this question.
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