We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling.
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Takahashi et al. (2000) studied this question.
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