Enhanced Tc's (>21°K), Tcwidths and resistivity ratios result when controlled amounts of O2are admitted during film growth. O2levels ≈ 5 × 10-7mm Hg stabilize the Nb3Ge phase over a wide range of Nb/Ge flux ratios for films grown at 6A/sec and 1000°C.
No takes yet. Share an insight, caveat, or question.
R. A. Sigsbee (1977) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: