Impact of carrier heating on backscattering in inversion layers

In this work, Monte Carlo simulations and analytical modeling are used to investigate quasi-ballistic transport in nanometric metal oxide semiconductor field effect transistors (MOSFETs). In particular, we examine how the thermal nature of the distribution functions, which is implicitly assumed in the most common expression for the backscattering coefficient, leads to an underestimation of the backscattering coefficient in high field conditions and erroneous velocity distribution along the channel. An improved analytical model is proposed, which better captures the nonequilibrium nature of the distribution function and its impact on backscattering and by allowing velocity profiles to exceed the thermal limit. The improved model provides additional insights on the impact of several assumptions on backscattering and could serve as the basis for the development of physically based compact models of quasi-ballistic MOSFETs.