Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation

Silicon-on-insulator (SOI) structures have been formed by oxygen implantation with the ion energy of 15-30 keV in silicon wafers. The ion implantation conditions which produce the SOI structure have been investigated both by calculation and experiments. As-implanted layers were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thicknesses of the SOI layer and the buried amorphous SiO x layer are 48 and 61 nm, respectively, under the conditions at the O + ion energy of 25 keV, with the dose of 2×10 17 ion/cm 2 , and at about 450°C. The SOI layers are homogeneous and have sharp Si/SiO x interfaces.