InP:Mn was grown by liquid phase epitaxy method. Ferroelectric characterization of the InMnP based capacitor revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of InP:Mn amounts to 3.84μC∕cm2 at 300Hz. Current-voltage hysteresis demonstrated a variation of built-in voltage, and capacitance versus voltage revealed a hysteresis as well. Imprint, electric conductivity, and hysteretic asymmetry of sample were enhanced after annealing at 800°C for 30s. It is considered that the hysteresis is originated from the displacement of phosphorus vacancy by Jahn-Teller distortion of [MnIn−VP] complex defect.
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Park et al. (2006) studied this question.
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