Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor, Jeon, In Sang, Park, Jaehoo, Eom, Dail, Hwang, Cheol Seong, Kim, Hyeong Joon, Park, Chan Jin, Cho, Hoon Young, Lee, Jong-Ho, Lee, Nae-In, Kang, Ho-Kyu
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Jeon et al. (2003) studied this question.