A comparative electrical characterization study of aluminum oxide deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity , than the thermal ALD . Remarkably, the plasma-assisted ALD films exhibit more negative fixed oxide charge density than the thermal ALD layers. In addition, it is shown that plasma-assisted ALD exhibits negligible trap-assisted (Poole–Frenkel) conduction unlike the thermal ALD films, resulting in higher breakdown electric fields than the thermal ALD prepared films.
No takes yet. Share an insight, caveat, or question.
Jinesh et al. (2010) studied this question.