An Al nitride-GaAs(100) bilayer formed by deposition of Al into a solid ammonia overlayer on GaAs(100) at T=100 K is studied using synchrotron radiation photoemission. Al does not react with NH3 to an appreciable amount at 100 K, but stable AlN layers are formed as the temperature of the substrate is raised to room temperature. The Al1−xNx layer formed is stable upon annealing up to 600 K, and detectable amounts of AlAs are not observed during deposition of 20 Å of Al into NH3 or after heating the sample to 300 K and higher.
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Park et al. (1991) studied this question.
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