Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C

Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.