p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 °C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kΩ. The current-voltage characteristics were measured between room temperature and 270 °C. The extracted ideality factors increase with temperature.
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Ávila et al. (1987) studied this question.
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