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May 1, 1992Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)

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HOH. J. OstenLeibniz University HannoverGLG. LippertLeibniz Institute for High Performance MicroelectronicsJKJ. KlattTexas Instruments (United States)

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Cite This Study

Osten et al. (1992) studied this question.

synapsesocial.com/papers/6a84fc11fdbaab0d3e990aebhttps://doi.org/10.1116/1.585879
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