Electronic polarization (relaxation) effects in the core level spectra of semiconductors. I. General theory of electronic polarization (relaxation) in semiconductors

The core electron binding energies of semiconductors cannot correctly be described without taking into account of polarization (relaxation) energies due to the core hole. A formula is developed which relates the polarization energy to the dielectric function ϵ( q , ω) of the semiconductor. Band structure effects and the dynamics of polarization are considered. An approximate expression for ϵ( q , ω) is derived which can be shown to give a reasonable description for the relevant q ‐ and ω‐regions. The theory represents the basis for the calculation of polarization energies in terms of only a few experimental parameters. The numerical results are given in the forthcoming paper (II).