This is the authors' abstract. We don't add key points for this paper.
An injection microdisk laser structure is realized using self-assembled InGaAs quantum dots (QDs) as the active layer. Single-mode continuous-wave lasing at ∼5 K from double layer (∼2.5×1010 cm−2 per layer) QDs in ∼4 μm diameter microdisks is reported. The threshold current of this device was as low as 69 μA. The estimated spontaneous emission factor is >0.05.
Answers are grounded in this paper and cite their sources.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (2003) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: