MoS 2 /graphene (MoS 2 /Gr) vertical heterostructures have exhibited great application potentials in high speed electronic and optoelectronic devices, as well as efficient electrocatalysts in hydrogen evolution reaction (HER). The electronic property at the edge of monolayer MoS 2 is an essential parameter for addressing such applications. Herein, it is reported that, for monolayer MoS 2 synthesized on Gr/Au foils by chemical vapor deposition, a dramatic decrease of the bandgap from ≈2.20 to ≈0.30 eV occurs at the domain edge within a lateral distance of ≈6 nm, as evidenced by scanning tunneling microscopy/spectroscopy observations. The edges of monolayer MoS 2 on Gr/Au foils can thus be regarded as narrow‐gap quantum wires considering of their reduced bandgaps. More intriguingly, it is found that this bandgap decrease at the domain edge is closely related to the rather high HER performance for MoS 2 /Gr/Au foils comparing with that of MoS 2 /Au foils. Briefly, this work should propel the band structure investigations for MoS 2 /Gr stacks and their applications in energy related fields.
No takes yet. Share an insight, caveat, or question.
Shi et al. (2016) studied this question.