A nonvolatile integrated metal-nitride-oxide-silicon (MNOS) word organized memory was fabricated. The salient features of this integrated storage array are 1) WRITE cycle 2.0 microseconds, READ cycle 500 nanoseconds, 2) WRITE voltage ± 25V, 3) single device per storage bit, 4) MOS driving circuitry with no isolation between MOS and MNOS devices on the same chip, and 5) nonvolatile storage of information.
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D. Frohman‐Bentchkowsky (1969) studied this question.