Electrical erasure of in-system memory chips has always been a desire for circuit operation. A novel technique which utilizes hot-hole injection in the snapback regime for memory erasure is described. This operation does not require a high-cost quartz lid or a special device structure. Although endurance characteristics are limited by channel hot-carrier-induced degradation, hundreds of WRITE and ERASE cycles can be easily achieved.
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Liang et al. (1986) studied this question.
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