Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

We have proposed a novel 2-bit/cell metal–oxide–nitride–oxide–semiconductor memory device with a wrapped gate. Programming and erasing operations are performed by source-side hot-electron injection and hot-hole injection, respectively. Programming speeds of less than 1 µs, programming currents of less than 0.2 µA/µm, and erasing speeds of 10 µs were achieved. In this paper, we describe the abilities of this device and the mechanism of the operation by using a device simulator.