Effects of RF annealing on the excess charge centers in MIS dielectrics

Excess fixed charge and surface states in various MIS structures have been successfully removed by the RF annealing technique. Important processing parameters that are pertinent to a successful anneal have been defined. A qualitative model is proposed to describe the annealing mechanisms, and to account for the experimental results. It is thought to be a cooperative effect involving the RF field, the plasma radiation, and the induced wafer temperature.