Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Synchrotron-based x-ray microbeam techniques have been used to map crystallographic strain and multilayer thickness in micro-optoelectronic devices produced with the selective area growth technique. Our main results show that growth enhancements in InGaAsP multilayer device material are different for well and barrier material. Comparison with a vapor-phase model for selective area growth suggests that this difference is due to different vapor-phase incorporation rates for the group III metals.