Factors Influencing Prediction of Transistor Current Gain in Neutron Radiation

Prediction of transistor performance in neutron radiation is subject to many variables. Several of these were investigated in order to improve prediction accuracy. Experimental data are discussed for the base transit time parameter, variation in damage with different bias conditions during irradiation, changes in damage observed after room-temperature storage and repeated high current measurements, and junction capacitance as a function of measurement frequency before and after irradiation.