Measurements of hall-effect and sheet resistivity as a function of temperature on hot, phosphorous implants in silicon

Results of Hall-effect measurements as a function of temperature on a layer formed by hot, phosphorous (P31) implant in Si at 400 keV energy in a random direction are presented; the dose used was 1015 ions cm−2. The electrical behaviour of the layer as a function of isochronal annealing was examined. A detailed analysis of the measured quantities n 8eff, the effective surface density of free carriers, and μeff, the effective mobility, down to 4.2°K is presented using the integral equations: $$graphics$$ These formulae were solved numerically, the input data viz: the distribution of donor centres and compensating damage centres being assumed from the current literature. Results from this analysis indicate a rather complicated distribution of current flow in the layer as a function of temperature, indicating that the traditional interpretation of Hall measurements based on a homogeneous distribution model is of questionable validity.