Backscattering measurements of the temperature dependence of irradiation-induced displacement of as and sb atoms in Si crystals

The temperature dependence of the irradiation-induced displacement of As and Sb atoms into 〈100〉 channels in diffused crystals of Si-0.1% As, Si-0.4% As and Si-0.1% Sb has been studied by backscattering of 1–2 MeV He+ ions. The maximum displaced fraction and the initial displacement rate varied with irradiation temperature, reaching a maximum at approximately 420 K for the Si-0.1% As crystal. The displaced fractions of As and Sb atoms were reduced by irradiation at 30 K after initial irradiation at 293 K. The results indicate that the solute atom displacement was caused by the trapping of several vacancies at each solute atom.