The kinetics of recrystallization of a silicon layer rendered amorphous by the implantation of 1015 phosphorous ions cm−2 of energy 80 keV is studied during isothermal warm-up with the help of Raman spectroscopy. The results indicate that this recrystallization occurs through a controlled growth at the interface between the amorphous and crystalline phases. The sharp change of the electrical conductivity which takes place at the crystallization temperature is correlated with the fraction which is crystallized.
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Prasad et al. (1976) studied this question.
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